Abstract

One illustrative method disclosed herein includes, among other things, performing first and second in situ doping, epitaxial deposition processes to form first and second layers of in situ doped epi Semiconductor material, respectively, above a semiconductor substrate, wherein one of the first and second layers has a high level of germanium and a low level of P-type dopant material and the other of the first and second layers has a low level of germanium and a high level of P-type dopant material, and performing a mixing thermal anneal process on the first and second layers so as to form the final silicon germanium material having a high level of germanium and a high level of P-type dopant material.

Date

2016

Authors

AP Jacob, JA Fronheiser, MK Akarvardar

Inventors

Ajey Poovannummoottil Jacob, Jody A Fronheiser, Murat Kerem Akarvardar

Patent_office

US

Patent_number

9455140

Application_number

14525351