Abstract

One illustrative method disclosed herein includes, among other things, oxidizing a lower portion of an initial fin struc ture to thereby define an isolation region that vertically sepa rates an upper portion of the initial fin structure from a semi conducting Substrate, performing a recess etching process to remove a portion of the upper portion of the initial fin struc ture so as to define a recessed fin portion, forming a replace ment fin on the recessed fin portion so as to define a final fin structure comprised of the replacement fin and the recessed fin portion, and forming a gate structure around at least a portion of the replacement fin.

Date

August 23, 2016

Authors

AP Jacob, MK Akarvardar

Inventors

Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar

Patent_office

US

Patent_number

9425315

Application_number

14811921