Abstract

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, eg PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor

Date

2016

Authors

R Xie, WJ Taylor Jr, AP Jacob

Inventors

Ruilong Xie, William J Taylor Jr, Ajey Poovannummoottil Jacob

Patent_office

US

Application_number

15065998