Abstract

SiGe for channel material has been explored as a major technology element after the introduction of FINFET into CMOS technology [1–4]. Research on long channel FETs and discrete short channel FETs demonstrated benefits in mobility [1–4] and reliability [2]. Given the disruption that SiGe FIN brings, every aspect associated with SiGe FIN needs to be carefully studied towards technology insertion. In this paper, we report the latest SiGe-based FINFET CMOS technology development. CMOS FINFETs with Si-FIN nFET and SiGe-FIN pFET is demonstrated as a viable technology solution for both server and mobile applications at 10nm node and beyond.

Date

2016

Authors

Dechao Guo, G Karve, G Tsutsui, Kwan-Yong Lim, R Robison, T Hook, R Vega, Derrick Liu, S Bedell, Shogo Mochizuki, F Lie, Kerem Akarvardar, Miaomiao Wang, Ruqiang Bao, Sean Burns, Victor Chan, Kangguo Cheng, J Demarest, Jody Fronheiser, Pouya Hashemi, James Kelly, Juntao Li, Nicolas Loubet, Pietro Montanini, Bhagawan Sahu, M Sankarapandian, Stuart Sieg, J Sporre, J Strane, R Southwick, N Tripathi, Rajasekhar Venigalla, Jing Wang, K Watanabe, Chun-Wing Yeung, Dinesh Gupta, Bruce Doris, Nelson Felix, Ajey Jacob, H Jagannathan, Sivananda Kanakasabapathy, Renee Mo, Vijay Narayanan, Devendra Sadana, Phil Oldiges, James Stathis, Tenko Yamashita, Vamsi Paruchuri, Matthew Colburn, Andreas Knorr, Rama Divakaruni, Huiming Bu, M Khare

Conference

2016 IEEE Symposium on VLSI Technology

Pages

1-2

Publisher

IEEE