Abstract

Obtaining a structure comprised of first and second layers of a first semiconductor materials and a strain relief buffer (SRB) layer between the first and second layers, forming a sidewall spacer on the sidewalls of an opening in the second layer, and forming a third semiconductor material in the open ing, wherein the first, second and third semiconductor mate rials are different. A device includes first and second layers of first and second semiconductor materials and an SRB layer positioned above the first layer. The second layer is positioned above a first portion of the SRB layer, a region of a third semiconductor material is in an opening in the second layer and above a second portion of the SRB layer, and an insulat ing material is positioned between the region comprised of the third semiconductor material and the second layer.

Date

2016

Authors

BJ Pawlak, S Bentley, A Jacob

Inventors

Bartlomiej Jan Pawlak, Steven Bentley, Ajey Jacob

Patent_office

US

Patent_number

9368578

Application_number

13758225