Abstract

One method of forming episemiconductor cladding materials in the channel region of a semiconductor device is disclosed which includes forming an initial episemiconductor cladding material around the exposed portion of a fin for an entire axial length of the fin, forming a sacrificial gate structure around a portion of the fin and the initial cladding material, removing the sacrificial gate structure so as to thereby define a replace ment gate cavity, performing an etching process through the replacement gate cavity to remove at least the exposed portion of the initial cladding material and thereby expose a Surface of the fin within the replacement gate cavity, forming at least one replacement episemiconductor cladding material around the exposed Surface of the fin, and forming a replacement gate structure within the replacement gate cavity around the at least one replacement episemiconductor cladding material.

Date

2016

Authors

AP Jacob, WP Maszara, JA Fronheiser

Inventors

Ajey Poovannummoottil Jacob, Witold P Maszara, Jody A Fronheiser

Patent_office

US

Patent_number

9362405

Application_number

14560361