Abstract

Prior Publication Data An illustrative method includes forming a FinFET device above structure comprising a semiconductor Substrate, a first US 2016/OO35863 A1 Feb. 4, 2016 epi Semiconductor material and a second episemiconductor material that includes forming an initial fin structure that comprises portions of the semiconductor Substrate, the first Related US Application Data epimaterial and the second epimaterial, recessing a layer of
--- insulating material Such that a portion, but not all, of the

Date

2016

Authors

X Cai, R Xie, AP Jacob, WP Maszara, K Cheng, A Khakifirooz

Inventors

Xiuyu Cai, Ruilong Xie, Ajey P Jacob, Witold P Maszara, Kangguo Cheng, Ali Khakifirooz

Patent_office

US

Patent_number

9349840

Application_number

14883049