Publications

Methods of forming fin isolation regions on finFET semiconductor devices using an oxidation-blocking layer of material

Abstract

One illustrative embodiment involves forming a plurality of trenches in a Substrate so as to define a fin, forming a first oxidation-blocking layer of insulating material in the trenches so as to cover a portion, but not all, of the sidewalls of the lower portion of the fin, forming a second layer of insulating material above the first oxidation-blocking layer of insulating material, and performing a thermal anneal process to convert part, but not all, of the lower portion of the fin positioned above the first oxidation-blocking layer of insu lating material into an oxide fin isolation region positioned under the fin.

Date
May 24, 2016
Authors
AP Jacob, B Doris, K Cheng, A Khakifirooz, K Rim
Inventors
Ajey Poovannummoottil Jacob, Bruce Doris, Kangguo Cheng, Ali Khakifirooz, Kern Rim
Patent_office
US
Patent_number
9349658
Application_number
14608625