Abstract

0003 2. Description of the Related Art 0004. In modern integrated circuits, such as microproces sors, storage devices and the like, a very large number of circuit elements, especially transistors, are provided and operated on a restricted chip area. In integrated circuits fab ricated using metal-oxide-semiconductor (MOS) technology, field effect transistors (FETs)(both NMOS and PMOS tran sistors) are provided that are typically operated in a Switching mode. That is, these transistor devices exhibit a highly con ductive state (on-state) and a high impedance state (off-state). FETs may take a variety of forms and configurations. For example, among other configurations, FETs may be either so-called planar FET devices or three-dimensional (3D) devices, such as FinFET devices. 0005. A field effect transistor (FET), irrespective of whether an NMOS transistor or a
0006 PMOS transistor is considered, and irrespective of …

Date

2016

Authors

AP Jacob, N Loubet

Inventors

Ajey Poovannummoottil Jacob, Nicolas Loubet

Patent_office

US

Application_number

14963683