Abstract

A transistor device includes a semiconductor substrate and a gate structure positioned above a surface of the semiconductor substrate. The gate structure includes a high-k gate insulation layer positioned above the surface of the semiconductor substrate and at least one work-function adjusting layer of material positioned above the high-k gate insulation layer, wherein an upper surface of the at least one work-function adjusting layer of material has a stepped profile when viewed in cross-section taken in a gate-width direction of the transistor device. The gate structure further includes a layer of conductive material positioned on the stepped upper surface of the at least one work-function adjusting layer of material.

Date

2016

Authors

R Xie, X Cai, AC Wei, Q Zhang, AP Jacob, M Hargrove

Inventors

Ruilong Xie, Xiuyu Cai, Andy C Wei, Qi Zhang, Ajey Poovannummoottil Jacob, Michael Hargrove

Patent_office

US

Application_number

14963378