Abstract

Semiconductor devices including a finand method of forming the semiconductor devices are provided herein. In an embodi ment, a method of forming a semiconductor device includes forming a fin overlying a semiconductor Substrate. The finis formed by epitaxially-growing a semiconductor material over the semiconductor Substrate, and the fin has a first portion that is proximal to the semiconductor Substrate and a second por tion that is spaced from the semiconductor substrate by the first portion. A gate structure is formed over the fin and the semiconductor substrate. The first portion of the fin is etched to form a gap between the second portion and the semicon ductor substrate.

Date

2016

Authors

S Bentley, AP Jacob

Inventors

Steven Bentley, Ajey P Jacob

Patent_office

US

Patent_number

9293324

Application_number

14274406