Abstract

(57) ABSTRACT A method includes forming a plurality offin elements above a substrate. A mask is formed above the substrate. The mask has an opening defined above at least one selected fin element of the plurality offin elements. An ion species is implanted into the at least one selected fin element through the opening to increase its etch characteristics relative to the other fin elements. The at least one selected fin element is removed selectively relative to the other fin elements.

Date

2016

Authors

X Cai, AP Jacob, R Xie, B Doris, K Cheng, JR Cantone, S Mignot, ...

Inventors

Xiuyu Cai, Ajey Poovannummoottil Jacob, Ruilong Xie, Bruce Doris, Kangguo Cheng, Jason R Cantone, Sylvie Mignot, David Moreau, Muthumanickam Sankarapandian, Pierre Morin, Su Chen Fan, Kisik Choi, Murat K Akarvardar

Patent_office

US

Patent_number

9287130

Application_number

14676345