Publications

Methods of forming metastable replacement fins for a finfet semiconductor device by performing a replacement growth process

Abstract

Various methods are disclosed herein for forming alternative fin materials that are in a stable or metastable condition. In one case, a metastable replacement fin is grown to a height that is greater than an unconfined stable critical thickness of the replacement fin material and it has a defect density of 10 5 defects/cm 2 or less throughout at least 90% of its entire height. In another case, a metastable replacement fin is grown to a height that is greater than an unconfined metastable critical thickness of the replacement fin material and it has a defect density of 10 5 defects/cm 2 or less throughout at least 90% of its entire height.

Date
2016
Authors
AP Jacob, MK Akarvardar, J Fronheiser, WP Maszara
Inventors
Ajey P Jacob, Murat K Akarvardar, Jody Fronheiser, Witold P Maszara
Patent_office
US
Application_number
14931277