Publications
Methods of removing portions of at least one fin structure so as to form isolation regions when forming FinFET semiconductor devices
Abstract
METHODS OF REMOVING PORTIONS OF AT LEAST ONE FINSTRUCTURE SOAS TO FORMSOLATION REGIONS WHEN FORMING FINFET SEMCONDUCTOR DEVICES
- Date
- 2016
- Authors
- AP Jacob
- Inventors
- Ajey Poovannummoottil Jacob
- Patent_office
- US
- Patent_number
- 9269628
- Application_number
- 14560557