Abstract

(57) ABSTRACT A method includes forming an ion implant layer in a fin defined on a semiconductor Substrate. The semiconductor
Substrate is annealed to convert the ion implant layer to a dielectric layer. A gate electrode structure is formed above the finina channel region after forming the ion implant layer. The fin is recessed in a source/drain region. A semiconductor material is epitaxially grown in the source/drain region.

Date

2016

Authors

AP Jacob, MH Chi

Inventors

Ajey P Jacob, Min-Hwa Chi

Patent_office

US

Patent_number

9263587

Application_number

14476830