Abstract

Methods and structures for forming uniaxially-strained, nanoscale, semiconductor bars from a biaxially-strained semiconductor layer are described. A spatially-doubled man drel process may be used to form a mask for patterning dense, narrow trenches through the biaxially-strained semiconduc tor layer. The resulting slicing of the biaxially-strained layer enhances carrier mobility and can increase device perfor aCC.

Date

February 2, 2016

Authors

P Morin, M Vinet, L Grenouillet, AP Jacob

Inventors

Pierre Morin, Maud Vinet, Laurent Grenouillet, Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

9252208

Application_number

14447678