Publications
Methods of forming isolated channel regions for a finfet semiconductor device and the resulting device
Abstract
METHODS OF FORMING SOLATED CHANNEL REGIONS FOR A FINFET SEMCONDUCTOR DEVICE AND THE RESULTING DEVICE
- Date
- 2016
- Authors
- AP Jacob, N Loubet
- Inventors
- Ajey Poovannummoottil Jacob, Nicolas Loubet
- Patent_office
- US
- Application_number
- 14859729