Abstract

One method disclosed herein includes forming a sacrificial gate structure comprised of upper and lower sacrificial gate electrodes, performing at least one etching process to define a patterned upper sacrificial gate electrode comprised of a plu rality of trenches that expose a portion of a surface of the lower sacrificial gate electrode and performing another etch ing process through the patterned upper sacrificial gate elec trode to remove the lower sacrificial gate electrode and a sacrificial gate insulation layer and thereby define a first por tion of a replacement gate cavity that is at least partially positioned under the patterned upper sacrificial gate elec trode.

Date

2016

Authors

R Xie, X Cai, AC Wei, Q Zhang, AP Jacob, M Hargrove

Inventors

Ruilong Xie, Xiuyu Cai, Andy C Wei, Qi Zhang, Ajey Poovannummoottil Jacob, Michael Hargrove

Patent_office

US

Patent_number

9236258

Application_number

14259694