Abstract

The present invention generally relates to semiconductor transistors. More particularly, the present invention relates to fabricating fins of a FinFET with a partial dielectric under only the channel region of the fins. 2. Background Information Fin field-effect transistors (FinFET) devices have been developed to replace conventional planar bulk MOSFETs in advanced CMOS technology due to their improved short channel effect immunity and I/Irratio. However, a problem with bulk short channel FinFET devices, is that a leakage path from Source to drain exists through a portion of the fin not covered by the gate, but lies below the channel. The leakage of current from Source to drain through the lower (un-gated) part of the fin that is not covered by the gate, commonly known as punch-through leakage, causes an increase of static power consumption which is undesirable in modern Submi cron devices.
In one solution, punch …

Date

2015

Authors

MK Akarvardar, JA Fronheiser, AP Jacob

Inventors

Murat Kerem Akarvardar, Jody A Fronheiser, Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

9224865

Application_number

13945627