Abstract

BACKGROUND
The replacement fin process is an integration method to achieve semiconductor fins of silicon germanium (SiGe), SiGe silicon carbide (SiC), silicon germanium carbide (SiGeC), germanium (Ge), or combined group III and group IV elements (III-V). However, a defect free replacement fin approach has not been achieved on standard orientation (100) wafers with fin sidewalls and electrical transport in the< 110> crystalline direction. For example, a known approach of replacement fin integration is illustrated in FIGS. 1A through 1D. Adverting to FIG. 1A, silicon (Si) fins 101 and 103 are formed on a Si substrate 105 by etching. In particular, the sidewalls of the Si fins 101 and 103 have a degree of rough ness as a result of the etching process. Although exaggerated for illustration purposes, the roughness need only be on the angstrom (A) level to provide nucleation sites for defect propagation. A shallow …

Date

2015

Authors

J Fronheiser, MK Akarvardar, AP Jacob, S Bentley

Inventors

Jody Fronheiser, Murat Kerem Akarvardar, Ajey P Jacob, Steven Bentley

Patent_office

US

Patent_number

9165837

Application_number

14525743