Abstract

One illustrative method disclosed herein includes removing the sidewall spacers and a gate cap layer so as to thereby expose an upper surface and sidewalls of a sacrificial gate structure, forming an etch stop layer above source/drain regions of a device and on the sidewalls and upper Surface of the sacrificial gate structure, forming a first layer of insulating material above the etch stop layer, removing the sacrificial gate structure so as to define a replacement gate cavity that is laterally defined by portions of the etch stop layer, forming a replacement gate structure in the replacement gate cavity, and forming a second gate cap layer above the replacement gate
Structure.

Date

2015

Authors

R Xie, X Cai, AP Jacob, A Knorr, C Prindle

Inventors

Ruilong Xie, Xiuyu Cai, Ajey Poovannummoottil Jacob, Andreas Knorr, Christopher Prindle

Patent_office

US

Patent_number

9147748

Application_number

14267555