Abstract

H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, eg a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor

Date

2015

Authors

Y Qi, AP Jacob, S Liang

Inventors

Yi Qi, Ajey Poovannummoottil Jacob, Shurong Liang

Patent_office

US

Patent_number

9123627

Application_number

14267010