Publications
Methods of forming epitaxial semiconductor material on source/drain regions of a finfet semiconductor device and the resulting devices
Abstract
METHODS OF FORMING EPITAXIAL SEMCONDUCTORMATERAL ON SOURCEADRAN REGIONS OF A FINFET SEMCONDUCTOR DEVICE AND THE RESULTING DEVICES
- Date
- 2015
- Authors
- JA Fronheiser, BV Krishnan, MK Akarvardar, S Bentley, AP Jacob, J Liu
- Inventors
- Jody A Fronheiser, Bharat V Krishnan, Murat Kerem Akarvardar, Steven Bentley, Ajey Poovannummoottil Jacob, Jinping Liu
- Patent_office
- US
- Application_number
- 14164934