Abstract

2. Background Information Fin Field-Effect Transistors (FinFET) devices are cur rently being developed to replace conventional planar metal oxide semiconductor field-effect transistors (MOSFETs) in advanced complementary metal oxide semiconductor (CMOS) technology due to their improved short-channel effect immunity and higher on-current to off-current ratio

Date

2015

Authors

AP Jacob, MK Akarvardar, SJ Bentley, BJ Pawlak

Inventors

Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Steven John Bentley, Bartlomiej Jan Pawlak

Patent_office

US

Patent_number

9076842

Application_number

14011125