Abstract

(65) Prior Publication Data(57) ABSTRACT US 2015/O129962 A1 May 14, 2015 One method disclosed includes, among other things, remov s ing a sacrificial gate structure to thereby define a replacement (51) Int. Cl. gate cavity, performing an etching process through the HOIL 2L/84(2006.01) replacement gate cavity to define a fin structure in a layer of HOIL 27/2(2006.01) semiconductor material using a patterned hard mask exposed HOIL 29/66(2006.01) within the replacement gate cavity as an etch mask and form HOIL 29/423(2006.01) ing a replacement gate structure in the replacement gate cav HOIL 27/092(2006.01) ity around at least a portion of the fin structure.(52) US Cl. CPC...... HOIL 27/1211 (2013.01); HOIL 29/42372 9 Claims, 29 Drawing Sheets

Date

2015

Authors

R Xie, AP Jacob

Inventors

Ruilong Xie, Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

9059042

Application_number

14078979