Abstract

Disclosed are methods and devices that involve formation of alternating layers of different semiconductor materials in the channel region of FinFET devices. The methods involve forming Such alternating layers of different semiconductor materials in a cavity formed above the substrate finand there after forming a gate structure around the fin using gate first or gate last techniques.

Date

2015

Authors

A Paul, AP Jacob, MH Chi

Inventors

Abhijeet Paul, Ajey Poovannummoottil Jacob, Min-Hwa Chi

Patent_office

US

Patent_number

9023705

Application_number

14069868