Abstract

Embodiments herein provide approaches for device isolation in a complimentary metal-oxide fin field effect transistor. Specifically, a semiconductor device is formed with a retrograde doped layer over a substrate to minimize a source to drain punch-through leakage. A set of replacement fins is formed over the retrograde doped layer, each of the set of replacement fins comprising a high mobility channel material (eg, silicon, or silicon-germanium). The retrograde doped layer may be formed using an in situ doping process or a counter dopant retrograde implant. The device may further include a carbon liner positioned between the retrograde doped layer and the set of replacement fins to prevent carrier spill-out to the replacement fins.

Date

2015

Authors

AP Jacob, MK Akarvardar, SJ Bentley, T Nagumo, K Cheng, BB Doris, ...

Inventors

Ajey P Jacob, Murat K Akarvardar, Steven J Bentley, Toshiharu Nagumo, Kangguo Cheng, Bruce B Doris, Ali Khakifirooz

Patent_office

US

Patent_number

8963259

Application_number

13906852