Abstract

0007. In general, aspects of the present invention relate to an approach for using a dopant to provide increased device isolation by the use of in situ doping prior to SiGe cladding depositional application.
0008 A first aspect of the present invention provides a method for forming an integrated circuit using the steps of first forming a set offins on a silicon Substrate in a predeter mined pattern, doping the set of fins in situ with an N-type dopant, and Subsequently growing an epitaxial cladding layer over the doped fins to form a multigate semiconductor device. 0009. A second aspect of the present invention provides a method for forming an integrated circuit using the steps of first forming a set offins on a silicon Substrate in a predeter mined pattern, doping the fins in situ with an N-type dopant,

Date

2014

Authors

AP Jacob, MK Akarvardar, BB Doris, A Khakifirooz

Inventors

Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Bruce B Doris, Ali Khakifirooz

Patent_office

US

Application_number

13921265