Abstract

BACKGROUND
Conventional Complementary Metal Oxide Semiconduc tor (CMOS) devices have been the primary electronic tech nology for over half a century. However, continuous scaling of conventional CMOS devices has resulted in challenges to reduce power dissipation and to lower variability. Spintron ics, with its unique properties of magnetism in metallic and semiconductor nanostructures, has emerged as a possible technology for meeting these challenges. Spintronic devices, namely spin transistors, operate based on the propagation of the spins of electrons rather than the transport of the charge of the electrons. More specifically, it has been shown that when current flows through a ferromag netic layer into an ordinary metal, electrons retain their origi nal spin polarization and, therefore, the polarized spin along a magnetic field can be transported just like charges. This concept has resulted in several …

Date

2014

Authors

KL Wang, A Poovannummoottil, F Xiu

Inventors

Kang-Lung Wang, Ajey Poovannummoottil, Faxian Xiu

Patent_office

US

Patent_number

8860006

Application_number

13071934