Publications

Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process

Abstract

(54) METHODS OF FORMINGA 8,034,689 B2 10/2011 Lenoble et al. SEMCONDUCTOR DEVICE WITH A 8,076,231 B2 12/2011 Saitoh et al. 8,159,018 B2 4/2012 Akil et al. NANOWIRE CHANNEL STRUCTUREBY 2009/0242964 A1* 10, 2009 Akil et al...................... 257,324 PERFORMING AN ANNEAL PROCESS 2009/0294839 A1 12/2009 Doyle et al.

Date
2014
Authors
JA Fronheiser, JA Wahl, K Akarvardar, AP Jacob, DT Pham
Inventors
Jody A Fronheiser, Jeremy A Wahl, Kerem Akarvardar, Ajey P Jacob, Daniel T Pham
Patent_office
US
Patent_number
8853019
Application_number
13798616