Abstract

BACKGROUND
In contrast to conventional planar metal-oxide-semicon ductor field-effect transistors (“MOSFETs), multi-gate tran sistors incorporate two or more gates into a single device. Relative to single gate transistors, multi-gate transistors reduce off-state current leakage, increase on-state current flow, and reduce overall power consumption. Multi-gate devices having non-planar topographies also tend to be more compact than conventional planar transistors and conse quently permit higher device densities to be achieved. One known type of non-planar, multi-gate transistor, com monly referred to as a “finFET includes two or more parallel fins (“fin structures”) formed on a semiconductor substrate. The fin structures extend along a first axis between common source and drain electrodes. In conventional finFET fabrica tion, the crystalline semiconductor material forming the fin structures is arranged such that the …

Date

2014

Authors

KM Akarvardar, AP Jacob

Inventors

Kerem Murat Akarvardar, Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

8809947

Application_number

13905741