Abstract

One illustrative method disclosed herein includes forming a mandrel structure above a semiconductor Substrate, perform ing an oxidation process to oxidize at least a portion of the mandrel structure so as to thereby define oxidized regions on the mandrel structure, removing the oxidized regions to thereby defined a reduced thickness mandrel structure, form ing a plurality offins on the reduced thickness mandrel struc ture and performing an etching process to selectively remove at least a portion of the reduced thickness mandrel structure so as to thereby expose at least a portion of each of the fins.

Date

2014

Authors

BJ Pawlak, S Bentley, A Jacob

Inventors

Bartlomiej Jan Pawlak, Steven Bentley, Ajey Jacob

Patent_office

US

Patent_number

8716156

Application_number

13757069