Abstract

A study of lattice-mismatched epitaxial growth and related defects and their effects on electrical characteristics of hetero-epitaxial III-Sb films grown on Si is presented in this paper. Growth of 800 nm thick GaSb on Si results in a threading dislocation density of~ 6x10 8 cm-2; density of planar defects such as microtwins of~ 2x10 4 cm-1 and anti-phase domain boundaries on the order of~ 10 4 cm-1, respectively. High defect-related acceptor-type doping is also observed, the effect of which is to change polarity from ntype to p-type, whilst p-type MOS shows similar characteristics as grown on GaAs substrate. The main surface features of strained InGaSb layers grown on metamorphic AlSb or AlGaSb buffers on Si are elongated bumps due to microtwins: however, hole mobility of~ 650 cm 2/Vs has been obtained in a buried strained quantum well channel. In this work, we study the use of the migration enhanced epitaxy …

Date

2014

Authors

Shailesh Madisetti, Vadim Tokranov, Andrew Greene, Michael Yakimov, Shun Sasaki, Makoto Hirayama, Steven Novak, Steven Bentley, Ajey Jacob, Serge Oktyabrsky

Journal

ECS Transactions

Volume

61

Issue

3

Pages

163

Publisher

IOP Publishing