Abstract

With the apparent limit of scaling on CMOS microelectronics fast approaching, spintronics has received enormous attention as it promises next-generation nanometric magnetoelectronic devices; particularly, the electric field control of the ferromagnetic transition in dilute magnetic semiconductor (DMS) systems offers magnetoelectronic devices a potential for low power consumption and low variability. Special attention has been given to technologically important group IV semiconductor based magnetic materials, with a prominent position for MnGe. Since the first claim of the realization of a MnGe DMS, tremendous efforts have been concentrated on enhancing the Curie temperature and on interpreting the observed ferromagnetism in terms of DMS theories. In this chapter, we will first review the current theoretical understanding on ferromagnetism in MnGe DMS, pointing out the possible physics models underlying …

Date

2011

Authors

KL Wang, F Xiu, AP Jacob

Book

Silicon–Germanium (SiGe) Nanostructures

Pages

575-609

Publisher

Woodhead Publishing