Publications

Effect of Mn concentration and growth temperature on nanostructures and magnetic properties of Ge1− xMnx grown on Si

Abstract

The nanostructures and magnetic properties of Ge1−xMnx thin films grown on Si substrates by molecular beam epitaxy, with different nominal Mn concentrations (1−4%) and different growth temperatures, have been systematically investigated by transmission electron microscopy and superconducting quantum interference device. It was discovered that when Ge1−xMnx thin films were grown at 70°C, with increase in Mn concentration, Mn-rich tadpole shaped clusters started to nucleate at 1% Mn and become dominate in the entire film at 4% Mn. While for the thin films grown at 150°C, tadpoles was firstly seen in the film with 1% Mn and subsequently Mn-rich secondary precipitates became dominant. The magnetic properties show specific features, which are mainly related to the nature and amount of Mn-rich clusters/precipitates within these thin films.

Date
October 1, 2010
Authors
Ya Wang, Faxian Xiu, Yong Wang, Hongyi Xu, De Li, Xufeng Kou, Kang L Wang, Ajey P Jacob, Jin Zou
Journal
Journal of Crystal Growth
Volume
312
Issue
20
Pages
3034-3039
Publisher
North-Holland