Abstract

Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5−1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm2/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.

Date

2009

Authors

Machteld I Van Der Meulen, Nikolay Petkov, Michael A Morris, Olga Kazakova, Xinhai Han, Kang L Wang, Ajey P Jacob, Justin D Holmes

Journal

Nano Letters

Volume

9

Issue

1

Pages

50-56

Publisher

American Chemical Society