Abstract

InAs quantum dots (QDs) were grown on patterned Si substrates with a thin GaAs buffer using Si O 2 as a mask by molecular beam epitaxy. GaAs was firstly selectively grown on the exposed Si surface with feature size around 250 nm⁠. The InAs QDs were selectively grown on top of the GaAs. Low temperature photoluminescence (PL) measurements show strong optical activity in the wavelength range from 900 to 1050 nm⁠. The temperature dependent measurement of the PL response indicates that, for temperatures over 110 K⁠, the carrier escape from quantum dots leads to quenching of the signal. The PL results demonstrate that using nanostructures, it is possible to integrate high quality direct gap III-V materials on Si with high optical activity, leading to potentially new optoelectronic applications on Si and other convenient substrates which are lattice mismatched to InAs and other III-V materials.

Date

2008

Authors

Zuoming Zhao, Zhibiao Hao, Kameshwar Yadavalli, Kang L Wang, Ajey P Jacob

Journal

Applied Physics Letters

Volume

92

Issue

8

Publisher

AIP Publishing