Abstract

The post-growth structural stability regarding relaxation and defect propagation in quantum well (QW) heterostructures grown on [001] oriented substrates at 300 °C by molecular beam epitaxy is investigated. The investigated heterostructures were subjected to post-growth thermal treatment in an ambient atmosphere in a temperature range between 280 and 550 °C for 3 h each. We have used high-resolution x-ray diffraction as the main characterization tool. High-resolution rocking curves as well as the powerful two-dimensional reciprocal space mapping were employed in both symmetrical as well as asymmetrical reflections. The results indicate that at a post-growth temperature cycle of 350 °C for 3 h slight modification of the barrier/QW heterointerface smoothness is affected. This indicates the onset of migration of Zn atoms at this post …

Date

2004

Authors

AP Jacob, T Myrberg, O Nur, M Willander, RN Kyutt

Journal

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Volume

22

Issue

2

Pages

565-569

Publisher

AVS