Abstract

Photoluminescence experiments have been performed to systematically study the effect of thermal processing on   epilayers. Our results show that, a ZnSeTe epilayer under proper post growth thermal annealing can emit light in the visible range of 5500–7000 Å at room temperature. Thus by systematically processing these samples, they could be used for II–VI laser diodes that can operate at room temperature. The results from hydrogen passivation study done on these samples are consistent with the previous reports that the broadband emission is related to an isoelectronic defect, i.e., excitons bound to the Te clusters.

Date

2003

Authors

AP Jacob, QX Zhao, Magnus Willander, CS Yang, Wu-Ching Chou

Journal

Journal of applied physics

Volume

94

Issue

4

Pages

2337-2340

Publisher

American Institute of Physics