Abstract

A systematic study on the hydrogen passivation of nonradiative centers in InAs quantum dot’s grown on GaAs substrates is presented. The samples used in this study were grown by molecular beam epitaxy. The structures contain an insertion layer between the InAs quantum dots layer and the GaAs cap layer. The thickness and In concentration of the are varied to achieve the emission wavelength at 1.3 μm. The samples after the plasma treatment show a significant increase of the photoluminescence intensity. The experimental results show that the quality of the InAs quantum dot structures does not degrade after the hydrogen plasma treatments. The enhancement of the photoluminescence intensity from the InAs quantum dots is thought to be due to the passivation of nonradiative centers like defects in the structures. High resolution x-ray diffraction rocking curves are used to correlate …

Date

2002

Authors

AP Jacob, QX Zhao, Magnus Willander, F Ferdos, M Sadeghi, SM Wang

Journal

Journal of applied physics

Volume

92

Issue

11

Pages

6794-6798

Publisher

American Institute of Physics