Abstract

The present disclosure relates to semiconductor structures and, more particularly, to integrated vertical transistors and light emitting diodes and methods of manufacture. The structure includes a vertically oriented stack of material having a light emitting diode (LED) integrated with a source region and a drain region of a vertically oriented active device.

Date

2019

Authors

AP Jacob, DK Nayak, SR Banna

Inventors

Ajey P Jacob, Deepak K Nayak, Srinivasa R Banna

Patent_office

US

Patent_number

10355043

Application_number

15635608