Abstract

The present disclosure relates to semiconductor structures and, more particularly, to uniform semiconductor nanowire and nanosheet light emitting diodes and methods of manu facture. The structure includes a buffer layer; at least one dielectric layer on the buffer layer, the at least one dielectric layer having a plurality of openings exposing the buffer layer; and a plurality of uniformly sized and shaped nanowires or nanosheets formed in the openings and extend ing above the at least one dielectric layer.

Date

2019

Authors

DK Nayak, SR Banna, AP Jacob

Inventors

Deepak K Nayak, Srinivasa R Banna, Ajey P Jacob

Patent_office

US

Application_number

15678385