Publications
Methods of forming fin isolation regions on FinFET semiconductor devices using an oxidation-blocking layer of material and by performing a fin-trimming process
Abstract
(57) ABSTRACT A method includes forming a plurality of trenches to define a fin, forming a first layer of insulating material in the trenches, forming a sidewall spacer on opposite sides of the fin above an upper Surface of the first layer, removing the first layer and performing a fin-trimming etching process to define a plurality of increased-size trenches. The method also includes forming a first oxidation-blocking layer of insulating material in the increased-size trenches, forming a second layer of insulating material above the oxidation blocking layer, and performing a thermal anneal process to convert at least a part of the portion of the fin that is in contact with the second layer of insulating material into an oxide fin isolation region.
- Date
- 2016
- Authors
- AP Jacob, B Doris, K Cheng, A Khakifirooz, K Rim
- Inventors
- Ajey Poovannummoottil Jacob, Bruce Doris, Kangguo Cheng, Ali Khakifirooz, Kern Rim
- Patent_office
- US
- Patent_number
- 9431306
- Application_number
- 15075437