Abstract

One method disclosed includes, among other things, covering the top surface and a portion of the sidewalls of an initial fin structure with etch stop material, forming a sacrificial gate structure around the initial fin structure, forming a sidewall spacer adjacent the sacrificial gate structure, removing the sacrificial gate structure, with the etch stop material in posi tion, to thereby define a replacement gate cavity, performing at least one etching process through the replacement gate cavity to remove a portion of the semiconductor Substrate material of the fin structure positioned under the replacement gate cavity that is not covered by the etch stop materialso as to thereby define a final fin structure and a channel cavity positioned below the final fin structure and substantially fill ing the channel cavity with a stressed material.

Date

2016

Authors

X Cai, R Xie, K Cheng, A Khakifirooz, AP Jacob, WP Maszara

Inventors

Xiuyu Cai, Ruilong Xie, Kangguo Cheng, Ali Khakifirooz, Ajey P Jacob, Witold P Maszara

Patent_office

US

Patent_number

9412822

Application_number

14200737