Abstract

A semiconductor device includes a fin defined on a substrate and a gate electrode structure formed above the fin. A channel region of the device is defined beneath the gate electrode structure and Source? drain regions of the fin are defined adja cent the gate electrode structure. A dielectric layer is defined at least in the channel region. The dielectric layer includes oxygen and at least one of nitrogen, carbon or fluorine.

Date

2016

Authors

AP Jacob, MH Chi

Inventors

Ajey P Jacob, Min-Hwa Chi

Patent_office

US

Application_number

14983329