Abstract

Fin field effect transistor integrated circuits and methods for producing the same are provided. A fin field effect transistor integrated circuit includes a plurality offins extending from a semiconductor substrate. Each of the plurality offins includes a fin sidewall, and each of the plurality offins extends to a fin height Such that a trough with a trough base is defined between adjacent fins. A second dielectric is positioned within the trough, where the second dielectric directly con tacts the semiconductor Substrate at the trough base. The second dielectric extends to a second dielectric height less than the fin height such that protruding fin portions extend above the second dielectric. A first dielectric is positioned between the fin sidewall and the second dielectric.

Date

2015

Authors

MK Akarvardar, X Cai, AP Jacob

Inventors

Murat Kerem Akarvardar, Xiuyu Cai, Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

9184162

Application_number

14615762