Abstract

Dielectric Isolated (DI) FinFETs exhibit superior electrostatic control compared to bulk FinFET without needing heavy sub-fin punchthrough stop doping, which increases device variability. Bottom oxidation through STI (BOTS)[1] and silicon-on-nothing (SON) are viable techniques to fabricate DI FinFETs on inexpensive bulk substates, as alternative to SOI substrate. In this paper we analyze DI FinFETs in terms of mechanical stress, transport, electrostatics and parasitic capacitances.

Date

2014

Authors

Darsen Lu, Kangguo Cheng, Pierre Morin, Nicolas Loubet, Terence Hook, Dechao Guo, Ali Khakifirooz, Phil Oldiges, Bruce Doris, Ken Rim, Ajey Jacob, Huiming Bu, Mukesh Khare

Conference

2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

Pages

1-2

Publisher

IEEE