Publications
This section contains publications published by ISI over the past several decades.
2017
Neural probabilistic model for non-projective MST parsing
Xuezhe Ma, Eduard Hovy
The 8th International Joint Conference on Natural Language Processing …, 2017
STCP: Simplified-Traditional Chinese Conversion and Proofreading
Jiarui Xu, Xuezhe Ma, Chen-Tse Tsai, Eduard Hovy
Proceedings of the IJCNLP 2017, System Demonstrations, 61-64, 2017
Softmax q-distribution estimation for structured prediction: A theoretical interpretation for raml
Xuezhe Ma, Pengcheng Yin, Jingzhou Liu, Graham Neubig, Eduard Hovy
arXiv preprint arXiv:1705.07136, 2017
An Interpretable Knowledge Transfer Model for Knowledge Base Completion
Qizhe Xie, Xuezhe Ma, Zihang Dai, Eduard Hovy
Proceedings of the 55th Annual Meeting of the Association for Computational …, 2017
Dropout with Expectation-linear Regularization
Xuezhe Ma, Yingkai Gao, Zhiting Hu, Yaoliang Yu, Yuntian Deng, Eduard Hovy
Proceedings of 5th International Conference on Learning Representations …, 2017
Multi-lingual Extraction and Integration of Entities, Relations, Events and Sentiments into ColdStart++ KBs with the SAFT System.
Hans Chalupsky, Jun Araki, Eduard H Hovy, Andrew Hsi, Zhengzhong Liu, Xuezhe Ma, Evangelia Spiliopoulou, Shuxin Yao
TAC, 2017
Development of a second-generation whole-body small-animal SPECT/MR imaging system
Benjamin MW Tsui, Jingyan Xu, Andrew Rittenbach, James W Hugg, Kevin B Parnham
Hybrid Imaging in Cardiovascular Medicine, 57-74, 2017
Energy Eficiency in HPC with Machine Learning and Control Theory
Connor Imes, Steven Hofmeyr, Henry Hofmann
Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxide
MK Akarvardar, AP Jacob
US Patent 9,842,897, 2017
14nm ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications
Zoran Krivokapic, U Rana, R Galatage, A Razavieh, A Aziz, J Liu, J Shi, HJ Kim, R Sporer, C Serrao, A Busquet, P Polakowski, J Müller, W Kleemeier, A Jacob, D Brown, A Knorr, R Carter, S Banna
2017 IEEE International Electron Devices Meeting (IEDM), 15.1. 1-15.1. 4, 2017
Method for forming nanowires including multiple integrated devices with alternate channel materials
AP Jacob
US Patent 9,831,131, 2017
Programmable via devices with metal/semiconductor via links and fabrication methods thereof
AP Jacob, SK Patil, MH Chi
US Patent 9,812,393, 2017
Methods of forming PMOS and NMOS FinFET devices on CMOS based integrated circuit products
AP Jacob
US Patent 9,799,767, 2017
Heterogeneous integration of 3D Si and III-V vertical nanowire structures for mixed signal circuits fabrication
SK Patil, AP Jacob
US Patent 9,754,843, 2017
Methods of forming PMOS FinFET devices and multiple NMOS FinFET devices with different performance characteristics
AP Jacob
US Patent 9,748,387, 2017
Methods of forming NMOS and PMOS FinFET devices and the resulting product
AP Jacob
US Patent 9,741,622, 2017
Electrical isolation of FinFET active region by selective oxidation of sacrificial layer
MK Akarvardar, JA Fronheiser, AP Jacob
US Patent 9,716,174, 2017
On-chip variable capacitor with geometric cross-section
S Patil, AP Jacob, SM Pandey
US Patent App. 14/987,211, 2017
Directed self-assembly material growth mask for forming vertical nanowires
S Bentley, RA Farrell, G Schmid, AP Jacob
US Patent 9,698,025, 2017