Publications
This section contains publications published by ISI over the past several decades.
Showing results 161 - 180 of about 351.
2015
Semi-supervised instance matching using boosted classifiers
Mayank Kejriwal, Daniel P Miranker
The Semantic Web. Latest Advances and New Domains: 12th European Semantic …, 2015
Quantum tomography protocols with positivity are compressed sensing protocols
Amir Kalev, Robert L Kosut, Ivan H Deutsch
npj Quantum Information 1 (1), 1-6, 2015
The power of being positive: Robust state estimation made possible by quantum mechanics
Amir Kalev, Charles H Baldwin, Ivan H Deutsch
arXiv preprint arXiv:1511.01433, 2015
Informational completeness in bounded-rank quantum-state tomography
Charles H Baldwin, Ivan H Deutsch, Amir Kalev
arXiv preprint arXiv:1510.02736, 2015
Fidelity-optimized quantum state estimation
Amir Kalev, Itay Hen
New Journal of Physics 17 (9), 093008, 2015
Quantum State Tomography of Cold Atom Qudits
Hector Sosa Martinez, Nathan Lysne, Poul Jessen, Charles Baldwin, Amir Kalev, Ivan Deutsch
APS Division of Atomic, Molecular and Optical Physics Meeting Abstracts 2015 …, 2015
360-degree quantum tomography of a qudit
Charles Baldwin, Amir Kalev, Hector Martinez, Nathan Lysne, Poul Jessen, Ivan Deutsch
APS Division of Atomic, Molecular and Optical Physics Meeting Abstracts 2015 …, 2015
Forming alternative material fins with reduced defect density by performing an implantation/anneal defect generation process
Y Qi, AP Jacob, S Liang
US Patent 9,224,605, 2015
FinFET with insulator under channel
MK Akarvardar, JA Fronheiser, AP Jacob
US Patent 9,224,865, 2015
Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device
X Cai, R Xie, AP Jacob, WP Maszara, K Cheng, A Khakifirooz
US Patent 9,214,553, 2015
Retrograde doped layer for device isolation
AP Jacob, SJ Bentley, MK Akarvardar, JA Fronheiser, K Cheng, BB Doris, ...
US Patent 9,190,411, 2015
Semiconductor devices including an electrically-decoupled fin and methods of forming the same
S Bentley, AP Jacob
US Patent App. 14/274,406, 2015
Methods of forming epitaxial semiconductor material on source/drain regions of a finfet semiconductor device and the resulting devices
JA Fronheiser, BV Krishnan, MK Akarvardar, S Bentley, AP Jacob, J Liu
US Patent App. 14/164,934, 2015
Process for faciltiating fin isolation schemes
AP Jacob, K Cheng, BB Doris, N Loubet, P Khare, R Divakaruni
US Patent 9,093,496, 2015
Fin pitch scaling and active layer isolation
AP Jacob, MK Akarvardar, SJ Bentley, BJ Pawlak
US Patent 9,076,842, 2015
Methods of forming replacement gate structures and fins on FinFET devices and the resulting devices
R Xie, AP Jacob
US Patent 9,059,042, 2015
Undoped epitaxial layer for junction isolation in a fin field effect transistor (finfet) device
AP Jacob, MK Akarvardar
US Patent App. 14/086,199, 2015
Methods of forming stressed multilayer FinFET devices with alternative channel materials
A Paul, AP Jacob, MH Chi
US Patent 9,023,705, 2015
Gate length independent silicon-on-nothing (SON) scheme for bulk FinFETs
MK Akarvardar, AP Jacob
US Patent 9,006,077, 2015
FinFET integrated circuits and methods for their fabrication
MK Akarvardar, X Cai, AP Jacob
US Patent 8,987,094, 2015