Publications
This section contains publications published by ISI over the past several decades.
2015
Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
X Cai, AP Jacob, DT Pham, MV Raymond, CM Prindle, CB Labelle, ...
US Patent 9,184,263, 2015
Methods of forming epitaxial semiconductor cladding material on fins of a FinFET semiconductor device
Y Qi, AP Jacob, JA Fronheiser, MK Akarvardar, DP Brunco
US Patent App. 14/267,634, 2015
Spin wave scattering and interference in ferromagnetic cross
Kasuni Nanayakkara, Ajey P Jacob, Alexander Kozhanov
Journal of Applied Physics 118 (16), 2015
Method to form defect free replacement fins by H2 anneal
J Fronheiser, MK Akarvardar, AP Jacob, S Bentley
US Patent 9,165,837, 2015
Methods of forming replacement spacer structures on semiconductor devices
R Xie, X Cai, AP Jacob, A Knorr, C Prindle
US Patent 9,147,748, 2015
Methods of forming isolated fins for a FinFET semiconductor device with alternative channel materials
AP Jacob, MK Akarvardar
US Patent 9,147,616, 2015
Methods of forming fins for FinFET semiconductor devices and selectively removing some of the fins by performing a cyclical fin cutting process
R Xie, A Knorr, AP Jacob, M Hargrove
US Patent 9,147,730, 2015
Replacement fin insolation in a semiconductor device
AP Jacob, MH Chi
US Patent App. 14/195,884, 2015
Methods of forming a non-planar ultra-thin body device
R Xie, AP Jacob, M Hargrove, WJ Taylor Jr
US Patent App. 14/197,686, 2015
Methods of forming alternative material fins with reduced defect density for a FinFET semiconductor device
Y Qi, AP Jacob, S Liang
US Patent 9,123,627, 2015
Methods of forming isolated germanium-containing fins for a FinFET semiconductor device
AP Jacob, MK Akarvardar, JA Fronheiser, K Cheng, B Doris, K Rim
US Patent 9,117,875, 2015
Forming alternative material fins with reduced defect density by performing an implantation/anneal defect generation process
Y Qi, AP Jacob, S Liang
US Patent 9,224,605, 2015
FinFET with insulator under channel
MK Akarvardar, JA Fronheiser, AP Jacob
US Patent 9,224,865, 2015
Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device
X Cai, R Xie, AP Jacob, WP Maszara, K Cheng, A Khakifirooz
US Patent 9,214,553, 2015
Retrograde doped layer for device isolation
AP Jacob, SJ Bentley, MK Akarvardar, JA Fronheiser, K Cheng, BB Doris, ...
US Patent 9,190,411, 2015
Semiconductor devices including an electrically-decoupled fin and methods of forming the same
S Bentley, AP Jacob
US Patent App. 14/274,406, 2015
Quantum tomography protocols with positivity are compressed sensing protocols
Amir Kalev, Robert L Kosut, Ivan H Deutsch
npj Quantum Information 1 (1), 1-6, 2015
The power of being positive: Robust state estimation made possible by quantum mechanics
Amir Kalev, Charles H Baldwin, Ivan H Deutsch
arXiv preprint arXiv:1511.01433, 2015
Informational completeness in bounded-rank quantum-state tomography
Charles H Baldwin, Ivan H Deutsch, Amir Kalev
arXiv preprint arXiv:1510.02736, 2015
Fidelity-optimized quantum state estimation
Amir Kalev, Itay Hen
New Journal of Physics 17 (9), 093008, 2015